Method of manufacturing image sensor for reducing dark current

Details Method of manufacturing image sensor for reducing dark current Method of manufacturing image sensor for reducing dark current

2005-01-04

2005-01-04

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S075000, C438S073000, C438S069000, C438S057000

Reexamination Certificate

active

06838298

ABSTRACT:
A method capable of removing dangling bonds generated on a surface of a photodiode is disclosed herein. The method includes steps of providing a semiconductor substrate having a light sensing area and removing dangling bonds at a surface of the light sensing area by diffusing hydrogen ions to the surface of the light sensing area.

REFERENCES:
patent: 5546375 (1996-08-01), Shimada et al.
patent: 6249330 (2001-06-01), Yamaji
patent: 6468826 (2002-10-01), Murakami et al.
patent: 6475836 (2002-11-01), Suzawa et al.
patent: 20010023086 (2001-09-01), Park et al.
patent: 1993-22569 (1993-11-01), None
patent: 2001-0061489 (2001-07-01), None
Notice of Preliminary Rejection Issued to Korean Patent Application 2001-71454 (Aug. 30, 2003), with with English Translation, total 3 pages.
Wuu et al., “High Performance 0.25-μm CMOS Color Imager Technology with Non-silicide Source/Drain Pixel”, IDEM pps. 705-708; 2000.

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