Method of manufacturing image sensor

Details Method of manufacturing image sensor Method of manufacturing image sensor

2008-06-12

2009-10-13

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE31127, C438S066000

Reexamination Certificate

active

07601557

ABSTRACT:
Provided is a method of manufacturing an image sensor. A microlens of inorganic material can be formed on a substrate by forming a seed microlens having a top surface with height differences, and then blanket etching the seed microlens to form a dome shaped microlens having a curvature following the height differences of the seed microlens. The height differences in the top surface of the seed microlens can be created by implanting nitrogen at different depths into an inorganic layer to form ion implantation regions, and removing the ion implantation regions from the inorganic layer.

REFERENCES:
patent: 2006/0189024 (2006-08-01), Kao et al.
patent: 2007/0161147 (2007-07-01), Kim
patent: 2008/0151378 (2008-06-01), Kim
patent: 2008/0156767 (2008-07-01), Yun et al.
patent: 2008/0160665 (2008-07-01), Cho
patent: 2008/0272452 (2008-11-01), Hwang
patent: 2008/0314864 (2008-12-01), Shin
patent: 2009/0108386 (2009-04-01), Park

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