Method of manufacturing image sensor

Details Method of manufacturing image sensor Method of manufacturing image sensor

2007-09-05

2009-11-17

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S016000, C438S029000, C257S094000, C257S103000

Reexamination Certificate

active

07618834

ABSTRACT:
Embodiments relate to a method of manufacturing an image sensor which includes forming a plurality of lower layers over a semiconductor substrate. A first passivation layer may be formed over the lower layers to protect the lower layers. The first passivation layer may be formed in a pixel region and a peripheral region with different thicknesses. A spin-on-glass (SOG) layer may be formed over the first passivation layer. A second passivation layer may be formed over the SOG layer. Array etching may be used to form a concave area in the semiconductor substrate. A plurality of micro lenses may be formed over the bottom surface of the concave area.

REFERENCES:
patent: 6852565 (2005-02-01), Zhao
patent: 2003/0197178 (2003-10-01), Yamazaki et al.
patent: 2007/0158772 (2007-07-01), Boettiger
patent: 1020060091343 (2006-08-01), None

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