Method of manufacturing III-IV group compound semiconductor devi

Details Method of manufacturing III-IV group compound semiconductor devi Method of manufacturing III-IV group compound semiconductor devi

1990-06-15

1992-01-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156613, 437 94, 437959, 437971, H01L 2120

Patent

active

050791842

ABSTRACT:
A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.

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Journal of Crystal Growth, vol. 93, 1988, pp. 613-617, North-Holland, Amsterdam, NL; Y. Ohba et al.: "A Study of P-Type Doping For AlGainP Grown by Low-Pressure MOCVD".
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