Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2011-05-24
2011-05-24
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257SE27111, C257SE25030
Reexamination Certificate
active
07948079
ABSTRACT:
Disclosed is a method of manufacturing a hybrid structure of multi-layer substrates. The method comprises steps of: separating a border district of at least one metal layer connecting with a border district of the corresponding dielectric layer from adjacent metal layers and adjacent dielectric layers for each multi-layer substrate and connecting a separated border of a metal layer of one multi-layer substrate with a separated border district of a metal layer of another multi-layer substrate to form a connection section. The hybrid structure comprises at least a first multi-layer substrate and a second multi-layer substrate. At least one first metal layer is connected with at least one second metal layer to form a connection section.
REFERENCES:
patent: 6222136 (2001-04-01), Appelt et al.
patent: 6423614 (2002-07-01), Doyle
patent: 6693029 (2004-02-01), Iijima et al.
patent: 2005/0046536 (2005-03-01), Ritter et al.
patent: 2005/0266660 (2005-12-01), Behammer
patent: 2006/0107506 (2006-05-01), Doffing et al.
patent: 2006/0199382 (2006-09-01), Sugiyama et al.
patent: 2008/0138575 (2008-06-01), Yang
patent: 1351815 (2002-05-01), None
patent: 1186971 (2005-01-01), None
patent: 1575094 (2005-02-01), None
patent: 1652663 (2005-08-01), None
patent: 1703136 (2005-11-01), None
patent: 1231965 (2005-12-01), None
patent: 1713802 (2005-12-01), None
patent: 2786910 (2006-06-01), None
patent: 05-243741 (1993-09-01), None
patent: 07-058431 (1995-03-01), None
patent: 08-236937 (1996-09-01), None
patent: 2002314257 (2002-10-01), None
patent: 466650 (2001-12-01), None
patent: 592019 (2004-06-01), None
patent: I232574 (2005-05-01), None
Dickey Thomas L
Princo Corp.
Yushin Nikolay
LandOfFree
Method of manufacturing hybrid structure of multi-layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing hybrid structure of multi-layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing hybrid structure of multi-layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2645306