Method of manufacturing high-surface-area silicon

Details Method of manufacturing high-surface-area silicon Method of manufacturing high-surface-area silicon

2011-06-21

2011-06-21

Silverman, Stanley (Department: 1736)

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

C423S348000, C423S349000, C075S343000, C977S775000

Reexamination Certificate

active

07964172

ABSTRACT:
A method for synthesis of high surface-area (>100 m2/g) and nanosized (≦100 nm) silicon powder by initiation of self-sustained combustion reaction in a mixture of silicon dioxide and magnesium powders in a sealed reactor chamber under pressurized inert gas atmosphere. A specific feature of the method is rapid cooling of the product at a rate of 100 K/s to 400 K/s in the area directly behind the combustion front.

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