Method of manufacturing high purity zirconium and hafnium

Details Method of manufacturing high purity zirconium and hafnium Method of manufacturing high purity zirconium and hafnium

2005-03-01

2005-03-01

Sheehan, John P. (Department: 1742)

Alloys or metallic compositions

Zirconium or hafnium base

C148S668000, C148S701000, C148S421000

Reexamination Certificate

active

06861030

ABSTRACT:
The present invention relates to high-purity zirconium or hafnium with minimal impurities, particularly where the content of alkali metal elements such as Na, K; radioactive elements such as U, Th; transitional metals or heavy metals or high melting point metal elements such as Fe, Ni, Co, Cr, Cu, Mo, Ta, V; and gas components such as C, O, etc. is extremely reduced, as well as to an inexpensive manufacturing method of such high-purity zirconium or hafnium, thereby reducing the impurities hindering the guarantee of the operational performance of semiconductors. The present invention further relates to an inexpensive and safe manufacturing method of high-purity zirconium or hafnium powder from hydrogenated high-purity zirconium or hafnium powder.

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Patent Abstracts of Japan, One page English Abstract of JP 02-310331.
Patent Abstracts of Japan, One page English Abstract of JP 52-006245.

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