Method of manufacturing high-purity silicon nitride powder

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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423324, 423406, 423413, C01B 21068

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043870791

ABSTRACT:
A method of manufacturing highly purified silicon nitride including the steps of preparing a nitrogen-containing silane selected from the group consisting of tetra-amide-monosilane and silicon imide, and heat-treating the prepared nitrogen-containing silane in the presence of ammonia in an inner atmosphere at a temperature above 400.degree. C. for a period of at least two hours to obtain silicon nitride, and cooling and collecting the silicon nitride thus formed. The step of preparing the nitrogen-containing silane comprises continuously reacting gaseous silicon tetra-chloride with gaseous ammonia in an inner atmosphere at a temperature of from -30.degree. to 70.degree. C. to produce the nitrogen-containing silane as a product and collecting the product. The resultant silicon nitride so produced has a chlorine content of less than 0.05 weight percent and a nitrogen content of over 38 weight percent.

REFERENCES:
Glemser et al, "Zeit schrift fur Amorganische Chemic", Band 298, 1959, pp. 134-141.
Mazdiyasni et al, "J. of the Amer. Ceramic Soc.", vol. 56, No. 12, 1973, pp. 628-633.
Mitomo et al, "Yogyo-Kyokai-Shi", 82, No. 942, 1974.

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