Method of manufacturing high power light-emitting device...

Details Method of manufacturing high power light-emitting device... Method of manufacturing high power light-emitting device...

2006-09-21

2009-02-03

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S116000

Reexamination Certificate

active

07485480

ABSTRACT:
A method of manufacturing high power light-emitting device packages and structure thereof, wherein the method thereof includes the steps of: (a) forming a plurality of lead frames, each of the lead frames includes a heat-dissipating element and a plurality of leads; (b) electroplating an outer surface of the lead frames each; (c) coating conductive gel on a surface of the heat-dissipatings each; (d) arranging at least one light-emitting chip on the conductive gel; (e) forming an encapsulant on each of the lead frames; (f) connecting at least one top electrode of the light-emitting chip with one of the leads; (g) coating silicon gel for covering the at one light-emitting chip, and forming integrally a focusing light convex surface on a top surface of the silicon gel; and (h) cutting off the tie-bars to separate the lead frames from one another, whereby forming a plurality of high power light-emitting device packages.

REFERENCES:
patent: 2002/0004251 (2002-01-01), Roberts et al.

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