Method of manufacturing high aspect-ratio field emitters for fla

Details Method of manufacturing high aspect-ratio field emitters for fla Method of manufacturing high aspect-ratio field emitters for fla

1994-12-12

1997-08-12

Nguyen, Tuan H.

Etching a substrate: processes

Forming or treating an article whose final configuration has...

445 50, 216 40, 438 20, 438951, H01L 2170

Patent

active

056565259

ABSTRACT:
A new method for forming an array of high aspect ratio field emitter for flat panel Field Emission Displays (FEDs) was accomplished. The method involves forming on an insulated substrate an array of parallel cathodes and then depositing a dielectric layer and forming a array of parallel gate electrodes essentially orthogonal to the array of cathode electrodes. Opening are then made in the upper gate electrodes and dielectric layer over the lower cathode electrodes. The field emitters with high aspect-ratios are then formed on the cathode by depositing an emitter material, such as molybdenum, in the opening while heating the substrate to high temperatures. The emitter material is removed elsewhere on the substrate by utilizing a release layer and thereby completing the gated field emitter. This high temperature method results in high aspect-ratio gated emitters that allow the inter-electrode dielectric layer to be increased and thereby improving the circuit performance.

REFERENCES:
patent: 5064396 (1991-11-01), Spindt
patent: 5075591 (1991-12-01), Holmberg
patent: 5229331 (1993-07-01), Doan et al.
patent: 5249340 (1993-10-01), Kane et al.
patent: 5342737 (1994-08-01), Georger, Jr. et al.
patent: 5393647 (1995-02-01), Neukermans et al.
patent: 5451175 (1995-09-01), Smith et al.
patent: 5480843 (1996-01-01), Park et al.

Affiliated with

Also associated with

Rating

Method of manufacturing high aspect-ratio field emitters for fla does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing high aspect-ratio field emitters for fla, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing high aspect-ratio field emitters for fla will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-159932