Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2008-04-22
2008-04-22
Gupta, Yogendra (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S088000, C117S089000, C117S091000, C117S105000
Reexamination Certificate
active
10809033
ABSTRACT:
The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3and N2.
REFERENCES:
patent: 6001748 (1999-12-01), Tanaka et al.
patent: 6068672 (2000-05-01), Watson et al.
patent: 6296956 (2001-10-01), Hunter
patent: 6362494 (2002-03-01), Yagi
patent: 6770135 (2004-08-01), Schowalter et al.
patent: 6946308 (2005-09-01), Hiramatsu et al.
patent: 2006/0183625 (2006-08-01), Miyahara
patent: 0 497 350 (1992-08-01), None
patent: 63-188938 (1988-08-01), None
patent: 4-297023 (1992-10-01), None
patent: 2000-233993 (2000-08-01), None
patent: 2002-184701 (2002-06-01), None
patent: 2004-006568 (2004-01-01), None
patent: 95/04845 (1995-02-01), None
patent: 2004/013385 (2004-02-01), None
English abstracts and computer translations of JP 2000-233993.
Kurai et al., “Nucleation Control in the Growth of Bulk GaN by Submission Method”, Jpn. J. Appl. Phys., vol. 36 (1997), pp. L184-L186, Part 2, No. 2B, Feb. 15, 1997.
Nishino et al., “Bulk GaN Growth by Direct Synthesis Method”, Journal of Crystal Growth, 237-239 (2002) 922-925.
Karpov, et al., “Effect of Reactive Ambient on AIN Sublimation Growth”, Phys. Stat. Sol. (a) 188, No. 2, 763-767 (2001).
Imade et al., “Growth of Bulk GaN Single Crystals by High-Pressure Sublimation Method”, Proceedings of the 48th Symposium on Synthetic Crystals, 1A06, pp. 23-24, Nov. 4, 2003 (GNR May 8, 2007).
Imade et al. “Growth of Thick GaN Films with High Growth Rate Using Sublimation Method under High Pressure”, Jpn. J. Appl. Phys., vol. 43 (2004), pp. L486-L488.
Imade Mamoru
Kai Yasunori
Kawamura Fumio
Kidoguchi Isao
Kitaoka Yasuo
Gupta Yogendra
Hamre Schumann Mueller & Larson P.C.
Rao G. Nagesh
Susaki Takatomo
LandOfFree
Method of manufacturing group III nitride single crystal,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing group III nitride single crystal,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing group III nitride single crystal,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3942101