Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2008-04-22
2008-04-22
Gupta, Yogendra (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S088000, C117S089000, C117S091000, C117S105000
Reexamination Certificate
active
07361220
ABSTRACT:
The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3and N2.
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Imade Mamoru
Kai Yasunori
Kawamura Fumio
Kidoguchi Isao
Kitaoka Yasuo
Gupta Yogendra
Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
Rao G. Nagesh
Susaki Takatomo
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