Method of manufacturing grid electrodes for electron tubes

Details Method of manufacturing grid electrodes for electron tubes Method of manufacturing grid electrodes for electron tubes

1977-03-10

1978-10-17

Lazarus, Richard B.

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

427122, H01J 914

Patent

active

041200802

ABSTRACT:
Disclosed is a method of manufacturing a pyrolytic graphite grid electrode in which after formation of the grid, the electrode is annealed at a temperature of 700.degree. to 1200.degree. C in a reactive atmosphere to remove carbon particles adhering to the electrode surface.

REFERENCES:
patent: 2693431 (1954-11-01), Williams
patent: 2911319 (1959-11-01), Peter
patent: 3535758 (1970-10-01), Hoet
R and D on Advanced Graphite Materials, by P. H. Higgs et al., 1964, pp. 1-42, Air Force Tech. Rept. WADD TR 61-72, vol. 37.

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