Method of manufacturing GaN substrate, method of...

Details Method of manufacturing GaN substrate, method of... Method of manufacturing GaN substrate, method of...

2011-04-26

2011-04-26

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE21001

Reexamination Certificate

active

07932114

ABSTRACT:
Assuming that r (m) represents the radius of a GaN substrate, t1(m) represents the thickness of the GaN substrate, h1(m) represents a warp of the GaN substrate before formation of an epitaxialwafer, t2(m) represents the thickness of an AlxGa(1-x)N layer, h2(m) represents a warp of the epitaxialwafer, a1represents the lattice constant of GaN and a2represents the lattice constant of AlN, the value t1found by the following expression is decided as the minimum thickness (t1) of the GaN substrate:in-line-formulae description="In-line Formulae" end="lead"?(1.5×1011×t13+1.2×1011×t23)×{1/(1.5×1011×t1)+1/(1.2×1011×t2)}/{15.96×x×(1−a2/a1)}×(t1+t2)+(t1×t2)/{5.32×x×(1−a2/a1)}−(r2+h2)/2h=0in-line-formulae description="In-line Formulae" end="tail"?A GaN substrate having a thickness of at least this minimum thickness (t1) and less than 400 μm is formed.

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