Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2007-10-30
2007-10-30
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S045000, C117S078000, C117S079000, C117S082000, C117S083000
Reexamination Certificate
active
10884386
ABSTRACT:
The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P1(atm(×1.013×105Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I):in-line-formulae description="In-line Formulae" end="lead"?P≦P1<(P+45), (I)in-line-formulae description="In-line Formulae" end="tail"?where in the expression (I), P (atm(×1.013×105Pa)) denotes the minimum pressure that is required for generating GaN crystals at a temperature T° C. of the mixed melt.
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Kawamura Fumio
Kidoguchi Isao
Kitaoka Yasuo
Minemoto Hisashi
Mori Yusuke
Hamre Schumann Mueller & Larson P.C.
Kunemund Robert
Yusuke MORI
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