Method of manufacturing gallium nitride semiconductor

Details Method of manufacturing gallium nitride semiconductor Method of manufacturing gallium nitride semiconductor

2005-12-13

2009-11-10

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Gettering of substrate

C438S472000, C438S478000, C438S483000, C438S493000

Reexamination Certificate

active

07615470

ABSTRACT:
The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.

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