Method of manufacturing gallium nitride-based single crystal...

Details Method of manufacturing gallium nitride-based single crystal... Method of manufacturing gallium nitride-based single crystal...

2004-05-04

2008-12-23

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S001000, C117S090000, C117S088000, C117S915000

Reexamination Certificate

active

07468103

ABSTRACT:
Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1−x−y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.

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Japanese Patent Office, Office Action mailed Feb. 13, 2007 and English Translation.

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