Method of manufacturing GaAs single crystals

Details Method of manufacturing GaAs single crystals Method of manufacturing GaAs single crystals

1995-04-21

1996-08-06

Straub, Gary P.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 92, 117904, 117954, 9272552, 927509, 927582, C30B 2942, C30B 2502

Patent

active

055423736

ABSTRACT:
A method of manufacturing GaAs single crystals in which gas in the vicinity of the surface of a substrate crystal is irradiated with light so as to an epitaxial growth of GaAs single crystals may be enabled by the halogen transport method under such condition that the temperature of the substrate crystal is lowered less than 700.degree. C.

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patent: 4959245 (1990-09-01), Dobson et al.
patent: 5074954 (1991-12-01), Nishizawa
Nishizawa et al Photoexcitation Effects on the Growth Rate in the Vapor Phase Epitaxial Growth of GaAs, J. Electrochemical society vol. 132 #8 Aug. 1985 pp. 1939-1942.
Nishizawa et al, In Situ Analyses of Photoexcitation Effects of GaAs, J. Electrochemical Society vol. 134 #12 Dec. 87 pp. 3155-3159.

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