Method of manufacturing flotox type eeprom

Details Method of manufacturing flotox type eeprom Method of manufacturing flotox type eeprom

2006-04-18

2006-04-18

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S706000, C438S745000

Reexamination Certificate

active

07030025

ABSTRACT:
Disclosed herein is a method of manufacturing a FLOTOX type EEPROM. According to the method, the thickness of an oxide film in a tunneling implanted region is formed thicker than that of an oxide film in a peripheral active region by use of enhanced oxidation of the tunneling implanted region. Then, a tunnel window region and the peripheral active region are dry-etched simultaneously and an etching end point of the peripheral active region is detected. Thereafter, the oxide film that remains in the tunnel window region is removed by wet etching.

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