Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2006-06-30
2009-12-15
Pert, Evan (Department: 2895)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S201000, C438S211000, C438S257000, C257SE21296
Reexamination Certificate
active
07632743
ABSTRACT:
A method of manufacturing a flash memory device includes forming a first polysilicon layer over a semiconductor substrate to form a floating gate. A tunnel dielectric layer is formed over the first polysilicon layer. A second polysilicon layer and a tungsten silicide layer are formed over the tunnel dielectric film to firm a control gate, the tungsten silicide layer having excess silicon. An upper portion of the tungsten silicide layer is oxidized to move the excess silicon away from an interface between the second polysilicon layer and the tungsten silicide.
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Hynix / Semiconductor Inc.
Pert Evan
Townsend and Townsend / and Crew LLP
Withers Grant S
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