Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2006-06-27

2006-06-27

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S221000, C438S296000, C438S369000, C438S370000, C438S692000, C438S719000, C438S723000, C438S724000, C438S753000, C438S756000, C438S757000, C438S770000, C438S775000

Reexamination Certificate

active

07067425

ABSTRACT:
A method of manufacturing a flash memory device includes the steps of forming a nitride film on an entire surface of a trench by means of an annealing process to prevent implanted ions for adjusting a threshold voltage from diffusing to a device isolation region, and forming a side wall oxide film on a surface of the nitride film. The nitride film plays a role of preventing ions implanted into a substrate for adjusting a threshold voltage from flowing into the side wall oxidation film.

REFERENCES:
patent: 6177333 (2001-01-01), Rhodes
patent: 6495424 (2002-12-01), Kunikiyo
patent: 6635532 (2003-10-01), Song et al.
patent: 6670666 (2003-12-01), Shimizu
patent: 2004/0178430 (2004-09-01), Rhodes et al.
patent: 2003-0053312 (2003-06-01), None
Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 209-210,325.
Official action in KR 2003-43792 dated Jun. 30, 2003.

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