Method of manufacturing field isolation for complimentary type d

Details Method of manufacturing field isolation for complimentary type d Method of manufacturing field isolation for complimentary type d

1994-07-05

1995-07-18

Fourson, George

Fishing, trapping, and vermin destroying

437 57, H01L 2176

Patent

active

054340993

ABSTRACT:
The method requires fewer process steps. A nitride layer and a first overlying photoresist are deposited on a semiconductor substrate having wells of different impurity types. The resist layer is developed and to cover first type well and the device area of the opposite second type well. After the resultant exposed nitride layer is removed, impurity ions are implanted. The first photoresist layer is removed and a second photoresist layer deposited. The second resist layer is deposited and developed to cover the second well and the device area in the first well. The resultant exposed nitride areas are removed and ions implanted. The second photoresist layer is removed and the substrate oxidized to form field oxide regions. The nitride layer is removed and the substrate completed by forming devices, passivation layers and metallurgy.

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