Method of manufacturing field-emitter

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437250, 437927, 156641, 156657, 156643, H01L 21465

Patent

active

053589092

ABSTRACT:
A field-emitter having stable electrical properties, a long service life and a very small electron emission voltage is provided. The cathode of the element has a strongly sharpened projection at the tip end, and a smooth connection between the projection and the body portion. In the method of manufacturing the elements, cathodes are produced with a high reproducibility by using a mold produced by forming concave portions in the silicon and oxidizing the layer thereon, whereby the spacing between the cathode and the gate electrode is determined by the thickness of the silicon oxide layer, and the position of the cathode is determined by the silicon oxide layer embedded in the silicon substrate, by using an etching stop method based on an electrochemical etching process.

REFERENCES:
patent: 3970887 (1976-07-01), Smith et al.
patent: 4168213 (1979-09-01), Hoeberechts
patent: 4307507 (1981-12-01), Gray et al.
patent: 4685996 (1987-08-01), Busta et al.
patent: 4916002 (1990-04-01), Carver
patent: 5090932 (1992-02-01), Dieumegard et al.
patent: 5100355 (1992-03-01), Marcus et al.
patent: 5201992 (1993-04-01), Marcus et al.
R. B. Marcus et al, "Formation of Silicon Tips with 4 nm Radius", Applied Physic Letters, vol. 56, No. 3, 15 Jan., 1990, pp. 236-238.
H. Umimoto et al, "Numerical Simulation of Stress-Dependent Oxide Growth at Convex and Concave Corners of Trench Structures", IEEE Electron Device Letters, vol. 10, No. 7, Jul. 1989 pp. 330-332.
S. M. Zimmerman et al, "Development Progress Toward the Fabrication of Vacuum Microelectronic Devices Using Conventional Semiconductor Processing", 1990 IEDM pp. 163-165.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing field-emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing field-emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing field-emitter will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-135289

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.