Method of manufacturing field effect transistors of GaAs by ion

Details Method of manufacturing field effect transistors of GaAs by ion Method of manufacturing field effect transistors of GaAs by ion

1983-03-30

1984-12-25

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 23, 357 65, 357 91, H01L 21263, H01L 2712

Patent

active

044894805

ABSTRACT:
The invention relates to a method of manufacturing field effect transistors of gallium arsenide obtained by ion implantation of light donors, such as silicon or selenium, in a semi-insulating substrate of gallium arsenide. In order to reduce out-diffusion of the deep level (EL.sub.2) responsible for parasitic phenomena in the operation of the transistors, the method is characterized in that in addition oxygen ions are implanted in at least the region of the substrate intended to form the channel region of the field effect transistor. After implantation, the substrate is sintered at a temperature between 600.degree. and 900.degree. C. in either an enveloping substance or uncovered, and/or in an atmosphere of arsine.

REFERENCES:
patent: 4033788 (1977-07-01), Hunsperger et al.
patent: 4357180 (1982-11-01), Molnar
patent: 4366493 (1982-12-01), Braslau et al.
patent: 4385938 (1983-05-01), Park et al.
patent: 4389768 (1983-06-01), Fowler et al.
patent: 4396437 (1983-08-01), Kwok et al.
Favennec et al., in Ion Implan. in Semiconductors-ed. Crowder, Plenum, N.Y. 1973, p. 621.
Okamura et al., Appl. Phys. Lett. 40 (1982) 689.
Kung et al., Electronics Lett. 13 (1977) pp. 187-188.

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