Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1975-12-05
1977-01-25
Tupman, W.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29580, 357 23, B01J 1700
Patent
active
040043410
ABSTRACT:
A method of manufacturing, making it possible to effect the simultaneous batch production in particular of field-effect transistors operating at frequencies in excess of 30 Gc/s, whose source and drain constitute two very narrow and very closely spaced bands, is provided. To this end, using a single masking operation, the source and drain of contacts are produced, these being covered by a chromium band. This band acts as a mask during the ion machining of a trench between the bands. The aluminium subsequently deposited, in particular in the trench, in order to form the gate of the transistor, is removed from the other regions of the structure by electrolytic etching. Along with the chromium, the aluminium serves as a mask during a final step of ion etching, which makes it possible to produce a "mesa" structure.
REFERENCES:
patent: 3330696 (1967-07-01), Ullery
patent: 3498833 (1970-03-01), Lehrer
patent: 3574010 (1971-04-01), Brown
patent: 3875656 (1975-04-01), Handy
"Thomson-CSF"
Tupman W.
LandOfFree
Method of manufacturing field-effect transistors designed for op does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing field-effect transistors designed for op, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing field-effect transistors designed for op will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1471788