Method of manufacturing field-effect transistors by forming doub

Details Method of manufacturing field-effect transistors by forming doub Method of manufacturing field-effect transistors by forming doub

1980-06-27

1982-03-02

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 49, 357 91, H01L 754, H01L 21265

Patent

active

043176860

ABSTRACT:
A method of making a field-effect transistor is described in which first and second insulating layers are formed in crystalline material by ion implantation and, if necessary, annealing, further crystalline material being grown, if necessary, after the first layer has been implanted. Source and drain regions are defined in the material between the first and second layers, a layer of protective oxide is formed and metallization to form contacts for a gate region and the source and drain regions is deposited. Field-effect transistors made by the method are described and circuits containing such transistors can be separated by etching down to the first layer or by regions of amorphous material.

REFERENCES:
patent: 3622382 (1971-11-01), Brack et al.
patent: 3873373 (1975-03-01), Hill
patent: 3897274 (1975-07-01), Stehlin et al.
patent: 4001049 (1977-01-01), Baglin et al.
patent: 4105805 (1978-08-01), Glendinning et al.
patent: 4133704 (1979-01-01), McIver et al.

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