Method of manufacturing field-effect transistor,...

Details Method of manufacturing field-effect transistor,... Method of manufacturing field-effect transistor,...

2011-07-12

2011-07-12

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

Reexamination Certificate

active

07977214

ABSTRACT:
There is provided a method of manufacturing a top contact field-effect transistor including forming a protection layer on an active layer formed in a semiconductor layer forming process, forming a photoresist film on the protection layer and pattern exposing the same in an exposure process, and developing the photoresist film passing through the exposure process using an alkaline developing liquid to form a resist pattern and removing a region exposed by the resist pattern from the protection layer to etch the protection layer in a subsequent development process; a field-effect transistor, and a method of manufacturing a display device.

REFERENCES:
patent: 2007/0077371 (2007-04-01), Dimitrakopoulos et al.
patent: 2009/0001360 (2009-01-01), Nakayama
patent: 2010/0117999 (2010-05-01), Matsunaga et al.
patent: 2008-166716 (2008-07-01), None
Applied Physics Letters, 90,212114(2007).

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