Method of manufacturing ferroelectric substance thin film...

Details Method of manufacturing ferroelectric substance thin film... Method of manufacturing ferroelectric substance thin film...

2007-03-27

2007-03-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S785000, C438S786000, C438S240000, C257SE21009

Reexamination Certificate

active

10825033

ABSTRACT:
The invention provides a method for forming a ferroelectric thin film that is uniform and good in crystallinity. The method includes applying a liquid to a surface of a substrate. The liquid includes ultra-fine particle powder comprising at least one element constituting the ferroelectric thin film to a surface of a substrate. The liquid applied to the surface of substrate is then baked.

REFERENCES:
patent: 5913117 (1999-06-01), Lee
patent: 5972096 (1999-10-01), Sawada et al.
patent: 6020233 (2000-02-01), Kim
patent: 6517642 (2003-02-01), Horie et al.
patent: 2002/0115307 (2002-08-01), Lee et al.
patent: 2002/0182754 (2002-12-01), Suenaga et al.
patent: 940856 (1999-08-01), None

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