Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-05-06
2008-05-06
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C257SE27104, C257SE21208, C257SE21663, C257SE21664
Reexamination Certificate
active
07368298
ABSTRACT:
An Ir film, an IrOxfilm, a Pt film, a PtO film and a Pt film are formed, and thereafter a PLZT film is formed. Then, heat treatment at 600° C. or lower is performed by the RTA method in an atmosphere containing Ar and O2to thereby crystallize the PLZT film. Subsequently, an IrOxfilm and an IrO2film are formed. Then, these films are patterned at once. Thereafter, an alumina film is formed as a protective film. Subsequently, heat treatment at 650° C. for 60 minutes in an oxygen atmosphere is performed as recovery annealing. Note that no heat treatment is performed from the crystallization of the PLZT film to the recovery annealing.
REFERENCES:
patent: 5116643 (1992-05-01), Miller et al.
patent: 6495413 (2002-12-01), Sun et al.
patent: 6509601 (2003-01-01), Lee et al.
patent: 6815226 (2004-11-01), Lee et al.
patent: 6887716 (2005-05-01), Fox et al.
patent: 2003/0234411 (2003-12-01), Kanaya et al.
patent: 2004/0005724 (2004-01-01), Lee et al.
patent: 2004/0043517 (2004-03-01), Sashida
patent: 2004/0046185 (2004-03-01), Sashida
patent: 2004/0084701 (2004-05-01), Kanaya et al.
Patent Abstracts of Japan, Publication No. 11054718, dated Feb. 26, 1999.
Patent Abstracts of Japan, Publication No. 2003017664, dated Jan. 17, 2003.
Fourson George
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Method of manufacturing ferroelectric semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing ferroelectric semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing ferroelectric semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2790620