Method of manufacturing ferroelectric MOSFET sensors

Details Method of manufacturing ferroelectric MOSFET sensors Method of manufacturing ferroelectric MOSFET sensors

1991-09-05

1993-10-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437901, 427100, H01L 21469, B05D 512

Patent

active

052545040

ABSTRACT:
A method of manufacturing ferroelectric sensors having piezoelectric and pyroelectric properties are provided. These sensors include a semiconductor transistor having a gate and a surface layered with an integral film comprising a substantially poled ferroelectric polymer. The integral film is electrically connected to ground or a voltage source and to the gate of the semiconductor transistor. The preferred integral film is deposited on the semiconductor transistor using spin coating techniques. Extremely sensitive acoustic imaging sensors and the like can be produced in accordance with the invention which have high voltage sensitivity and better acoustic impedance match with body tissues and water.

REFERENCES:
patent: 4520413 (1985-05-01), Piotrowski et al.
patent: 4820586 (1989-04-01), Krueger et al.
patent: 4830795 (1989-05-01), Scheinbeim et al.

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