Method of manufacturing ferroelectric memory device

Details Method of manufacturing ferroelectric memory device Method of manufacturing ferroelectric memory device

1999-12-08

2000-12-19

Dang, Trung

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, 438393, 438239, 438250, H01L 2100

Patent

active

06162649&

ABSTRACT:
A method of manufacturing a ferroelectric memory device capable of effectively preventing Ti from diffusing into a ferroelectric layer during thermal-treating of TiN/Ti which will be performed after, is disclosed. According to the present invention, a Pt layer for an upper elctrode of a capacitor is formed to a multi-layer by multi-step at high temperature, high pressure and low power, to densify its grain boundary. Furthermore, by adding O.sub.2 to sputtering gas when forming the Pt layer, thereby preventing Ti from diffusing into a ferroelectric layer through the Pt layer of the upper electrode. As a result, the electrical properties of a ferroelectric memory device are improved.

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