Fishing – trapping – and vermin destroying
Patent
1995-02-14
1997-01-07
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437937, 437978, H01L 218242
Patent
active
055916635
ABSTRACT:
A manufacturing method of a semiconductor device comprises the steps:(a) forming a ferroelectric capacitor on a semiconductor substrate on which a MOS transistor is formed, (b) forming an interlayer insulating film which covers the whole semiconductor substrate, (c) forming first contact holes which reach diffusion layers of the MOS transistor, (d) after forming the first contact holes, providing a heat treatment in hydrogen atmosphere, (e) after the heat treatment, forming second contact holes which reach upper and lower electrodes of the ferroelectric capacitor on the interlayer insulating film, and (f) forming metal interconnection. Since the heat treatment in hydrogen atmosphere is provided before forming the second contact holes, a surface state density at interface between the semiconductor and a gate insulating film of the MOS transistor can be lowered without degrading the characteristics of ferroelectric capacitor.
REFERENCES:
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 5374578 (1994-12-01), Patel et al.
patent: 5396095 (1995-03-01), Wolters et al.
Arita Koji
Inoue Atsuo
Matsuda Akihiro
Nagano Yoshihisa
Nasu Toru
Chaudhari Chandra
Matsushita Electonics Corporation
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