Method of manufacturing ferroelectric capacitor

Metal working – Electric condenser making

Reexamination Certificate

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C029S592100, C029S609000, C029S832000, C029S851000, C257S306000, C257S310000, C257S528000, C257S532000, C427S079000, C427S080000, C429S072000, C429S079000, C429S226000, C429S302000, C361S301400, C361S308100, C361S311000, C361S312000, C361S313000, C361S761000

Reexamination Certificate

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06857172

ABSTRACT:
According to the present invention, a method of manufacturing a ferroelectric capacitor using a ferroelectric thin film, includes steps of: forming a lower conductive layer on a semiconductor substrate; coating solution of ferroelectric coking including organic solvent and organometallic complex on the lower conductive layer; performing a heating process for coated solution at temperature, to decompose said organometallic complex in solution of ferroelectric coking, or more and ferroelectric crystallization temperature or below to form said metal compound thin film; forming an upper conductive layer on said metal compound thin film; and performing a heating process for said metal compound thin film at ferroelectric crystallization temperature or more to form said ferroelectric thin film.

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patent: 2000223662 (2000-08-01), None
“Fatigue characteristics of PZT thin films prepared by low thermal budget process”; Dong-Gun Lim; Young Park; Sang-Il Moon; Junsin Yi; Applications of Ferroelectrics, 2000. ISAF 2000; Jul. 21-Aug. 2, 2000; pp. 599-602.

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