Method of manufacturing epitaxial silicon wafer

Details Method of manufacturing epitaxial silicon wafer Method of manufacturing epitaxial silicon wafer

2011-08-09

2011-08-09

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C117S003000, C438S750000, C216S045000

Reexamination Certificate

active

07993452

ABSTRACT:
A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.

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File History from U.S. Appl. No. 11/793,155 from Oct. 27, 2008 to Present (29 pages).
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