Cleaning and liquid contact with solids – Processes – Combined
Reexamination Certificate
2006-03-28
2006-03-28
Carrillo, Sharidan (Department: 1746)
Cleaning and liquid contact with solids
Processes
Combined
C205S205000, C205S210000, C205S219000, C436S055000, C436S149000, C436S150000, C422S082010, C422S082020, C434S002000, C434S003000, C434S025000, C434S025000, C434S025000, C434S032000, C434S041000, C434S042000, C434S383000
Reexamination Certificate
active
07018482
ABSTRACT:
A method of manufacturing electronic devices, in particular, but not exclusively, semiconductor devices, and apparatus for carrying out such a method, in which method wafers1, which are provided at a surface2with a material3to be removed, are subjected, while being divided into successive batches, to a wet treatment in a bath4containing a solution5of an active component in a solvent. The successive batches of wafers1are immersed in the solution5at first time intervals during the wet treatment of the successive batches, which first time intervals each consist of a processing period during which the material3is removed from the surface2of the wafers1, thereby forming ionic components, and a waiting period following the removal of the wafers1from the bath4at the end of the processing period. During the wet treatment of the successive batches the conductivity of the solution5is monitored, which monitored conductivity is brought to approximately a desired conductivity at second time intervals during the wet treatment of the successive batches by adding the active component or the solvent, or both, to the solution5inside the bath4. In order to improve the process stability of the wet treatment of the successive batches of wafers1in the solution5of the active component in the solvent and to lengthen the lifetime of the bath4containing the solution5, the desired conductivity is changed at third time intervals during the wet treatment of the successive batches with a value, which value is determined at each one of the third time intervals on the basis of the amount of the material removed during the latest completed one of the third time intervals.
REFERENCES:
patent: 2979843 (1961-04-01), Triman
patent: 4996160 (1991-02-01), Hausman Hazlitt et al.
patent: 5439569 (1995-08-01), Carpio
patent: 5779927 (1998-07-01), Lo
patent: 5788801 (1998-08-01), Barbee et al.
patent: 6261845 (2001-07-01), Verhaverbeke et al.
patent: 60114579 (1985-06-01), None
patent: 03-283488 (1991-12-01), None
patent: 06-061218 (1994-03-01), None
patent: 09129588 (1997-05-01), None
patent: 10326769 (1998-12-01), None
patent: WO00/79583 (2000-12-01), None
“In-Situ Chemical Concentration Control for Wafer Wet Cleaning”, by Ismail Kashkoush, et al, Mat. Res. Soc. Symp. Proc. vol. 477, 1997.
Carrillo Sharidan
Waxler Aaron
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