Method of manufacturing electron-emitting device, electron sourc

Etching a substrate: processes – Forming pattern using lift off technique

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216100, 216101, B44C 122

Patent

active

056226349

ABSTRACT:
An electron-emitting device comprising a pair of device electrodes and an electroconductive film including an electron-emitting region is manufactured by a method comprising a process of forming an electroconductive film including steps of forming a pattern on a thin film containing a metal element on the basis of a difference of chemical state, and removing part of the thin film on the basis of the difference of chemical state.

REFERENCES:
patent: 4999083 (1991-03-01), Watanabe et al.
patent: 5066883 (1991-11-01), Yoshioka et al.
Patent Abstracts of Japan, vol. 014, No. 528 (1990), JP-A-02 223141.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing electron-emitting device, electron sourc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing electron-emitting device, electron sourc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing electron-emitting device, electron sourc will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-339272

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.