Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2008-07-29
2008-07-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Electron emitter manufacture
C438S022000, C438S029000, C438S069000, C257S013000, C257S918000, C257SE31095, C257SE31096, C313S34600R
Reexamination Certificate
active
10885803
ABSTRACT:
A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disposing an anode electrode, and applying to the carbon layer a voltage higher than that at a driving of the electron-emitting device.
REFERENCES:
patent: 5180951 (1993-01-01), Dworsky et al.
patent: 5283501 (1994-02-01), Zhu et al.
patent: 6091186 (2000-07-01), Cao et al.
patent: 6225749 (2001-05-01), Kobayashi et al.
patent: 6231412 (2001-05-01), Kawade et al.
patent: 6267636 (2001-07-01), Onishi et al.
patent: 6379211 (2002-04-01), Onishi et al.
patent: 6380914 (2002-04-01), Xie
patent: 6388384 (2002-05-01), Pierrejean
patent: 6409563 (2002-06-01), Tamura et al.
patent: 6490433 (2002-12-01), Kawade
patent: 6821174 (2004-11-01), Kaneko et al.
patent: 6848962 (2005-02-01), Kitamura et al.
patent: 6861790 (2005-03-01), Iwasa et al.
patent: 2002/0060514 (2002-05-01), Nakamoto
patent: 2002/0074947 (2002-06-01), Tsukamoto
patent: 2002/0177032 (2002-11-01), Suenaga et al.
patent: 0 785 564 (1997-07-01), None
patent: 0 977 235 (2000-02-01), None
patent: 1 443 538 (2004-08-01), None
patent: 8-96703 (1996-04-01), None
patent: 09-035670 (1997-02-01), None
patent: 9-185942 (1997-07-01), None
patent: 9-199001 (1997-07-01), None
patent: 09-270227 (1997-10-01), None
patent: 3062987 (2000-05-01), None
patent: 3094459 (2000-08-01), None
patent: 2001-006523 (2001-01-01), None
patent: 2002-100278 (2002-04-01), None
patent: 2002-150929 (2002-05-01), None
patent: 2002-175756 (2002-06-01), None
D.P. Monaghan, K.C.Laing, P.A. Logan, P.Teer and D.G. Teer.General “property of Diamond- like coating”, Mterials world, vol. 1 No. 6 pp. 347-349, Jun. 1993.
V.V. Zhirnov et al.,Environmental Effect on the Electron Emission from Diamond Surfaces, J. Vac. Sci. Technol. B16(e), May/Jun. 1998, American Vacuum Society, pp. 1188-1193.
Canon Kabushiki Kaisha
Coleman W. David
Fitzpatrick ,Cella, Harper & Scinto
Kim Su C
LandOfFree
Method of manufacturing electron-emitting device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing electron-emitting device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing electron-emitting device and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3906937