Method of manufacturing DRAM cell having a cup shaped polysilico

Fishing – trapping – and vermin destroying

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437 48, 437 52, H01L 2170

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051852829

ABSTRACT:
A DRAM cell of a stack structure having a cup-shaped polysilicon storage electrode for being applied to a 16 mega and 64 mega DRAM wherein a transfer transistor is firstly manufactured, a bit line is formed, an oxide film grid is formed between the cell and cell in the minimum design rule, and upon completing this, the polysilicon storage electrode is formed into a single or double cup shape, whereby the capacitor area is remarkably increased when compared with the conventional stacked structure DRAM cell so that the area efficiency is greatly increased and the process can be executed by such a mask number as the prior stacked structure mask layer number and the structure thereof is simple.

REFERENCES:
Kaga et al., "Crown-shaped Stacked Capacitor Cell for 1.5 V Operation 64-Mb DRAM's", IEEE transactions on electron devices, vol. 38, No. 2, Feb. 1991, p. 255.

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