Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-01-29
2010-11-16
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S150000
Reexamination Certificate
active
07834353
ABSTRACT:
A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
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F. Takeuchi, et al., “Performance of poly-Si TFTs fabricated by a Stable Scanning CW Lase Crystallization”, AM-LCD'01, pp. 251-254.
Hatano Mutsuko
Hongo Mikio
Nakata Toshihiko
Nomoto Mineo
Ohkura Makoto
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Displays Ltd.
Lee Calvin
LandOfFree
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