Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-07-06
1983-10-25
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
148171, 148172, 148 15, H01L 2176
Patent
active
044110600
ABSTRACT:
In the manufacture of integrated circuits, it is often necessary to prepare dielectrically-isolated single-crystal silicon regions to be used as substrates in which various circuit elements may be formed. These regions or substrates are formed by attaching a single-crystal silicon wafer (1) having a dielectrically-coated surface (2) to a second single-crystal silicon wafer (3) by means of an intermediate metallic layer (4) positioned therebetween. Using a heating process, e.g., a thermomigration process also referred to as temperature gradient zone-melting (TGZM) technique, the metallic layer (4) is removed through the second silicon wafer (3). This method substantially eliminates any bending or warpage of the dielectrically-isolated substrate (FIG. 1).
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de Picciotto M. M.
Ozaki G.
Western Electric Co. Inc.
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