Method of manufacturing cubic boron nitride p-n junction body

Details Method of manufacturing cubic boron nitride p-n junction body Method of manufacturing cubic boron nitride p-n junction body

1989-03-02

1991-04-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

501 86, 501 96, 423890, 423446, 156603, 437137, H01L 2122, C30B 2938

Patent

active

050117904

ABSTRACT:
In a method of manufacturing a cubic boron nitride p-n junction body, cBN seed crystals (1) of a first conductivity type are made coexist with original BN (3) and a solvent (2) containing a doping material of a second conductivity type, to grow cBN of the second conductivity type from the seed crystals (1). The solvent (2) contains 0.1 to 5 percent by weight of the doping material. The seed crystals (1) are disposed one by one in a plurality of blocks of the solvent (2), which blocks are separated from each other, to be in contact with nothing but the solvent (2). Due to such disposal, no spontaneous nucleation is caused in portions other than the seed crystals (1). A large-grained cBN p-n junction body is obtained as the result.

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Program and Abstracts, The 28th High Pressure Conference of Japan Nov. 4-6, 1987, Kobe, Japan pp. 184-185.

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