Method of manufacturing crystalline silicon nitride and method o

Details Method of manufacturing crystalline silicon nitride and method o Method of manufacturing crystalline silicon nitride and method o

1983-03-17

1985-06-25

Kaplan, G. L.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

209 9, 209172, 422188, 422194, 423406, C01B 21068, B03B 530

Patent

active

045253358

ABSTRACT:
A method of manufacturing silicon nitride whiskers in which a carbon and silicon containing material having a thin configuration and sufficient porosity to permit both the passage of a gas therethrough and to provide spaces for growing whiskers therein is charged on a gas-permeable tray, and heated in a furnace of non-oxidizing atmosphere. The tray is moved intermittently through a series of temperature zones, increasing stage-by-stage from about 400.degree. C. to 1,300.degree. C., while a non-oxidizing gas is circulated through the porous material to remove any impurities. Thereafter, the heated tray is intermittently moved through a series of increasing temperature stages from about 1,350.degree. C. to 1,450.degree. C. in the presence of a flow of nitrogen gas to effect whisker growth. The heat-treated silicon nitride-containing material is dispersed in a two-phase mixture of a hydrophobic organic liquid and water. The desired silicon nitride whiskers can be isolated from the aqueous phase.

REFERENCES:
patent: 3084998 (1963-04-01), Dess
patent: 3244480 (1966-04-01), Johnson et al.
patent: 3855395 (1974-12-01), Cutler
patent: 4206190 (1980-06-01), Harvey et al.
patent: 4235857 (1980-11-01), Mangels
patent: 4256571 (1981-03-01), Somasundaran et al.

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