Method of manufacturing crystalline silicon carbide employing ac

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

423335, 156603, 156DIG112, 501 88, C01B 3136

Patent

active

045914923

ABSTRACT:
A method of manufacturing silicon carbide crystals in which a rice husk raw material is pretreated with an acid solution (e.g., 5N to 6N H.sub.2 SO.sub.4, HCl or HNO.sub.3) prior to being heated in a furnace of non-oxidizing atmosphere. Pretreatment of the rice husks in this manner results in silicon carbide crystals of high purity.

REFERENCES:
patent: 3754076 (1973-08-01), Cutler
patent: 3855395 (1974-12-01), Cutler
patent: 4049464 (1977-09-01), Tutsek et al.
patent: 4214920 (1980-07-01), Amick et al.
patent: 4248844 (1981-02-01), Ramsey, Jr. et al.
patent: 4283375 (1981-08-01), Horne, Jr. et al.
patent: 4284612 (1981-08-01), Horne, Jr. et al.
patent: 4293099 (1981-10-01), Parekh et al.
patent: 4483839 (1984-11-01), Sugiura et al.
patent: 4504453 (1985-03-01), Tanaka et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing crystalline silicon carbide employing ac does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing crystalline silicon carbide employing ac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing crystalline silicon carbide employing ac will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1570493

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.