Method of manufacturing crystalline silicon carbide

Details Method of manufacturing crystalline silicon carbide Method of manufacturing crystalline silicon carbide

1983-03-17

1985-03-12

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

156603, 156DIG112, 209 4, C01B 3136

Patent

active

045044538

ABSTRACT:
A method of manufacturing silicon carbide whiskers in which a carbon and silicon containing material having a thin configuration and sufficient porosity to permit both the passage of a gas therethrough and to provide spaces for growing whiskers therein is charged on a gas-permeable tray, and heated in a furnace of non-oxidizing atmosphere. The tray is moved intermittently through a series of temperature zones, increasing stage-by-stage from about 400.degree. C. to 1,300.degree. C., while a non-oxidizing gas is circulated through the porous material to remove any impurities. Thereafter, the heated tray is intermittently moved through a series of increasing temperature stages from about 1,350.degree. C. to 1,450.degree. C. to effect whisker growth. The treated silicon carbide-containing material is dispersed in a two-phase mixture of a hydrophobic organic liquid and water. The desired silicon carbide whiskers can be isolated from the aqueous phase.

REFERENCES:
patent: 3754076 (1973-08-01), Cutler
patent: 4248844 (1981-02-01), Ramsey, Jr. et al.
patent: 4256571 (1981-03-01), Somasundaran et al.
patent: 4283375 (1981-08-01), Horne, Jr. et al.
patent: 4293099 (1981-10-01), Parekh et al.

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