Fishing – trapping – and vermin destroying
Patent
1995-07-06
1997-09-23
Tsai, Jey
Fishing, trapping, and vermin destroying
437 52, 437 45, H01L 218246
Patent
active
056704020
ABSTRACT:
In a semiconductor device, N-type diffusion regions for providing an LDD structure are formed on a P-type substrate. A thick CVD deposited insulating film is formed on both the diffusion regions. A word line layer is formed on this deposited insulating film and a gate oxide film in a direction crossing the diffusion regions. Since the deposited insulating film is set to be thick, a capacity between one of the diffusion regions as a bit line layer and the word line layer is reduced so that a reading speed of the semiconductor device is improved. Further, a punch through proof pressure is increased since the diffusion regions have an LDD structure. Thus, it is possible to provide a planar cell structure which increases the reading speed and is advantageous in a fine structure. Another semiconductor device is also shown. A method for manufacturing the semiconductor device is further shown.
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Ando Yuichi
Sogawa Koichi
Ricoh & Company, Ltd.
Tsai Jey
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