Method of manufacturing contact image sensor

Details Method of manufacturing contact image sensor Method of manufacturing contact image sensor

1996-01-18

1999-11-16

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438460, 438 75, 438 98, H01L 27146

Patent

active

059856904

ABSTRACT:
A contact image sensor has a plurality of sensor elements on an insulating substrate, the sensor elements having electrodes as common electrodes and other electrodes as individual electrodes. The contact image sensor is manufactured by extending the common electrodes and the individual electrodes out of a document passage region, and forming short-circuiting patterns which electrically connect the common electrodes and the individual electrodes outside of the document passage region through pads which connect ICs for energizing the contact image sensor. After the ICs are connected to the pads, the insulating substrate is cut along the short-circuiting patterns to break the electrical connection between the common electrodes and the individual electrodes.

REFERENCES:
patent: 5337474 (1994-08-01), Oka et al.
patent: 5359206 (1994-10-01), Yamamoto et al.
patent: 5384266 (1995-01-01), Chapman
patent: 5422293 (1995-06-01), Konya
patent: 5580800 (1996-12-01), Zhang et al.
patent: 5798534 (1995-08-01), Young

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