Method of manufacturing compound semiconductor wafer

Details Method of manufacturing compound semiconductor wafer Method of manufacturing compound semiconductor wafer

1994-03-25

1995-06-20

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437107, 437126, 437133, 437174, 117 84, H01L 21203

Patent

active

054260680

ABSTRACT:
An undoped p-type GaAs epitaxial layer or an n-type GaAs epitaxial layer is grown on the surface of a wafer, and thereafter the wafer is annealed at a temperature which ranges from 800.degree. C. to 1,200.degree. C. and is equal to or higher than a predetermined critical temperature depending on the carrier concentration in the epitaxial layer before it is annealed. The epitaxial layer thus annealed is rendered semi-insulating without addition of any impurity. Accordingly, performances of an electronic device which incorporates such a wafer are improved.

REFERENCES:
patent: 5137847 (1992-08-01), Shimakura et al.

Affiliated with

Also associated with

Rating

Method of manufacturing compound semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing compound semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing compound semiconductor wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1843969