Method of manufacturing compound semiconductor and apparatus

Details Method of manufacturing compound semiconductor and apparatus Method of manufacturing compound semiconductor and apparatus

1992-09-08

1995-03-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 81, 117 83, C30B 1114

Patent

active

054007429

ABSTRACT:
A method of manufacturing a semiconductor boule, the method comprises providing a chamber having a crucible, introducing a material for forming the boule and a liquid encapsulant having a softening point into the crucible, heating the crucible to melt the material, cooling the material to grow a boule, and separating the grown boule from the crucible at a temperature higher than the softening point of the encapsulant.
An apparatus for manufacturing a semiconductor boule which comprises a chamber; a crucible for containing a seed crystal, a starting material, and a liquid encapsulant; a crucible shaft for holding the crucible; and a seed crystal shaft for holding the seed crystal and the boule formed by the seed crystal and starting material, the seed crystal shaft being elevated and rotated independently of the crucible shaft.

REFERENCES:
patent: 3060065 (1962-10-01), Orem
patent: 4264406 (1981-04-01), Hacskaylo
patent: 4776971 (1988-10-01), Mattera et al.
patent: 5131975 (1992-07-01), Bourret-Courchesne
Liquid Encapsulated, Vertical Bridgman Growth of Large Diameter, Low Dislocation Density, Semi-Insulating GaAs by K. Hoshikawa et al.; Journal of Crystal Growth, vol. 94, No. 3 (1989) 643-50.

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