Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1997-06-13
1998-11-24
Chang, Joni
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 46, H01L 2100
Patent
active
058405968
ABSTRACT:
Complementary Modulation-Doped Field-Effect Transistors (CMODFETs) using a heterostructure based on Silicon and Germanium alloys are described. The design of the Si/Si.sub.1-x Ge.sub.x -based CMODFET is also presented and shown to enable both n-channel or p-channel transport between source and drain implantation regions of the carriers with mobilities enhanced by 1) low ionized dopant scattering phenomena and 2) discretization of the free carrier energy due to quantum confinement.
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Chang Joni
Nothern Telecom Limited
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