Method of manufacturing cold cathode type electron emitting...

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

Reexamination Certificate

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Reexamination Certificate

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07144286

ABSTRACT:
A method of manufacturing a cold cathode type electron emitting device includes forming a pair of electrodes, which are spaced from each other, on a substrate, forming conductive thin films, which are electrically connected with the pair of electrodes and have a cracked portion therebetween, on a space between the pair of electrodes, forming conductive deposits on the cracked portion of the conductive thin films to form an electron emission section, and subjecting the electron emission section to a treatment using plasma to expand a gap between the conductive deposits on the cracked portion.

REFERENCES:
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patent: 2003/0227251 (2003-12-01), Ishizuka
patent: 11-40044 (1999-02-01), None
patent: 11-297192 (1999-10-01), None
patent: 2000-243248 (2000-09-01), None
Bischoff, M. et al., “Energy Distribution of Emitted Electrons From Electroformed MIM Structures: The Carbon Island Model”, Int. J. Electronics, vol. 73, No. 5, pp. 1009-1010, (1992), no month.
Bischoff, M., “Carbon-Nanoslit Model For the Electroforming Process in M-I-M Structures”, Int. J. Electronics, vol. 70, No. 3, pp. 491-498, (1991), no month.
Pagnia, H. et al., “Scanning Tunnelling Microscopic Investigations of Electroformed Planar Metal-Insulator-Metal Diodes”, Int. J. Electronics, vol. 69, No. 1, pp. 25-32, (1990): no month.
Pagnia, H., “Metal-Insulator-Metal Devices With Carbonaceous Current Paths”, Int. J. Electronics, vol. 69, No. 1, pp. 33-42, (1990), no month.
Pagnia, H. et al., “Bitable Switching in Electroformed Metal-Insulator-Metal Devices”, Review Article: Phys. Stat. Sol. (a)108, 11, pp. 11-65, (May 3, 1988).
Notification of Reasons for Rejection, issued by the Japanese Patent Office, mailed Jun. 14, 2005, in Japanese Patent Application No. 2003-163861, and English-language translation thereof.

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